MRAM integration techniques for technology scaling

ABSTRACT

A magnetoresistive random-access memory (MRAM) integration compatible with shrinking device technologies includes a magnetic tunnel junction (MTJ) formed in a common interlayer metal dielectric (IMD) layer with one or more logic elements. The MTJ is connected to a bottom metal line in a bottom IMD layer and a top via connected to a top IMD layer. The MTJ substantially extends between one or more bottom cap layers configured to separate the common IMD layer and the bottom IMD layer and one or more top cap layers configured to separate the common IMD layer and the top IMD layer. The MTJ can include a top electrode to connect to the top via or be directly connected to the top via through a hard mask for smaller device technologies. The logic elements include vias, metal lines, and semiconductor devices.

FIELD OF DISCLOSURE

Disclosed embodiments are directed to a Magnetoresistive Random AccessMemory (MRAM) integration, and more particularly, exemplary embodimentsare directed to techniques for MRAM integration with logic processesthat are scalable with advances in device technology and shrinkingdevice sizes.

BACKGROUND

Magnetoresistive Random Access Memory (MRAM) is a non-volatile memorytechnology that uses magnetic elements. MRAM operation is well known,and can be briefly explained using the example of a commonly usedvariety of MRAM, a Spin Transfer Torque MRAM (STT-MRAM). A STT-MRAM useselectrons that become spin-polarized as the electrons pass through athin film (spin filter).

FIG. 1 illustrates a conventional STT-MRAM bit cell 100. The STT-MRAMbit cell 100 includes magnetic tunnel junction (MTJ) storage element 105(also referred to as “MTJ stack” or “MTJ cell”), transistor 101, bitline 102 and word line 103. MTJ cell 105 is formed, for example, frompinned layer 124 and free layer 120, each of which can hold a magneticmoment or polarization, separated by insulating tunneling barrier layer122.

Where the design of MTJ cell 105 is that of an in-plane MTJs, ananti-ferromagnetic (AFM) layer and a cap layer (not shown) are used inMTJ cell 105. The AFM layer is used to pin the magnetic moment of thepinned layer of an in-plane MTJ. The cap layer is used as a buffer layerbetween the MTJ and metal interconnects. Where MTJ cell 105 is designedas a perpendicular MTJ, pinned layer 124 is present but an AFM layer isnot included.

The polarization of the free layer can be reversed by applying currentin a specific direction such that the polarity of the pinned layer andthe free layer are either substantially aligned or opposite. Theresistance of the electrical path through the MTJ varies depending onthe alignment of the polarizations of the pinned and free layers. Thisvariation in resistance can be used to program and read STT-MRAM bitcell 100, as is known. STT-MRAM bit cell 100 also includes circuitelements, source line 104, sense amplifier 108, read/write circuitry 106and bit line reference 107. Those skilled in the art will appreciate theoperation and construction of STT-MRAM bit cell 100 as known in the art.

As seen from the above example, the formation of a conventional STT-MRAMbit cell involves integration of the various above-described componentson a circuit board or semiconductor package. More specifically, memoryor storage elements (e.g., MTJ bit cell 105) must be integrated withvarious other circuit elements (generally referred to herein, as, “logicelements”) such as, passive components, metal wires, transistors, logicgates, etc. In general, such integration requires process compatibilitybetween the memory elements and the logic elements.

However, it is well known that semiconductor technology scaling is notuniform across the various components of integrated circuits. Forexample, with regard to MRAM formation, metal wire width and height ofvertical interconnect access (commonly known as “via”) are seen to scaleby about 70% from one generation to the next. On the other hand, aspectssuch as height of MTJ bit cells, cap layer thickness, etc., fail toscale at comparable pace.

Applicant's commonly owned US patent application to Li et al. (US PatentPublication 2012/0032287, entitled “MRAM Device and IntegrationTechniques Compatible with Logic Integration,” currently pending andhereinafter referred to as “Li”), discloses various techniques forintegration of a logic process (i.e., pertaining to formation of logicelements) with a process of forming MRAM device elements such as MTJ bitcells.

With reference to FIG. 2, a memory device similar to one of Li'sdisclosed embodiments is illustrated. More particularly, FIG. 2illustrates a cross-sectional view of memory device 200, which reflectsan embodiment of Li, with reference numerals modified and/or added forthe purposes of this disclosure. The following nomenclature isapplicable to FIG. 2. Elements of memory device 200 are illustrated inthree layers identified as “x−1,” “x,” and “x+1,” corresponding to intermetal dielectric (IMD) layers IMDx−1, IMDx, and IMDx+1. The same suffixto identify an IMD layer is also added to metal/via elements present inthe corresponding IMD layer. The illustrated elements are shown to bepartitioned as “logic” elements, which are juxtaposed with “MTJ”elements.

In more detail, the logic elements are representatively illustrated asvias and metal lines following the above notation, with vias V′x+1 andV′x in layers x+1 and x respectively, and metal lines M′x and M′x−1 inlayers x and x−1 respectively.

On the MTJ side, bit cell MTJ 202 is illustrated in layer x, with topelectrode (TE) 204, and bottom electrode (BE) 206. Metal line Mx may becoupled to TE 204 in layer x, which can be further coupled to via Vx+1in layer x+1, through the optional use of a top via top_Vx in layer x.Cap layer Cap3x in layer x is an optional feature for isolation andformation of a metal island for metal line Mx. BE 206 may be coupled tometal line Mx−1 in layer x−1 through via Vx.

Common to both the logic side and MTJ side elements are IMD layersIMDx−1, IMDx, and IMDx+1 in each of the layers x−1, x, and x+1,respectively. These IMD layers are separated by one or more cap layersin the depicted embodiment. The insulating cap layers are diffusionbarrier layers for the metal lines and may be formed from insulatorssuch as SiC, SiN film, etc. More specifically, one or more bottom caplayers, bottom-caps 1-2, separate IMD layers, IMDx−1 and IMDx+1,whereas, one or more top cap layers, top-caps 1-2, separate IMD layersIMDx and IMDx+1.

While the memory device 200 of FIG. 2 depicts robust and effectiveintegration of the logic and MTJ side elements in Li for currenttechnologies, technological advances place ever increasing restrictionson the maximum available height in each of the layers x−1, x, and x+1.The height of a layer may be viewed as the separation between cap layersbounding the layers. For example, the height of layer x may be viewed interms of the distance between bottom cap layers, bottom-caps 1-2, andtop cap layers, top-caps 1-2. As future technologies evolve into 20 nm,16 nm, 10 nm arenas, and beyond, the height of layer x, for example, mayshrink to reach dimensions which are so small that the height of layer xwill barely be sufficient to accommodate via V′x and metal M′x on thelogic side. This is because, as noted above, metal lines and vias canscale relatively rapidly with evolving technologies. However, MRAMtechnology is unlikely to evolve at the same rate. In other words, withevolving technologies, it will be highly challenging to accommodate thecurrently illustrated configuration for the MTJ side in layer x, if theheight of layer x reaches dimensions which are barely sufficient toaccommodate via V′x.

Accordingly, with evolving technology and shrinking device sizes, MTJ202 may extrude into the metal island Mx. Further, the metal island Mxmay need to be thinned, to the point where metal island Mx mayeffectively become non-existent. While Li discloses embodiments wherecomponents on the MTJ side in layer x may be lowered, such that BE 206may be sunk deeper, for example, into bottom-cap 2, this may lead toincreased stress on the remaining bottom cap layer, bottom-cap 1, as thetechnology evolves. On the other hand, elevating the position of thecomponents on the MTJ side may begin intruding into the top, x+1 layer.

Accordingly, for numerous reasons, the current approaches for MRAM andlogic integration in semiconductor devices may not be viable for futuretechnologies, as device sizes continue to shrink.

SUMMARY

Exemplary embodiments are directed to systems and methods pertaining tomagnetoresistive random-access memory (MRAM) integration compatible withshrinking device technologies.

Accordingly, an exemplary MRAM device includes a magnetic tunneljunction (MTJ) formed in a common interlayer metal dielectric (IMD)layer with one or more logic elements. The MTJ is connected to a bottommetal line in a bottom IMD layer and a top via connected to a top IMDlayer. The MTJ substantially extends between one or more bottom caplayers configured to separate the common IMD layer and the bottom IMDlayer and one or more top cap layers configured to separate the commonIMD layer and the top IMD layer. The MTJ can include a top electrode toconnect to the top via or be directly connected to the top via through ahard mask for smaller device technologies. The logic elements includevias, metal lines, and semiconductor devices.

Another exemplary embodiment is directed to a method of forming amagnetic tunnel junction (MTJ) in a common interlayer metal dielectric(IMD) layer with one or more logic elements, the method comprising:forming a bottom metal line in a bottom IMD layer; forming one or morebottom cap layers separating the common IMD layer and the bottom IMDlayer; forming a bottom electrode contact coupled to the bottom metalline; forming the MTJ on the bottom electrode contact; forming one ormore top cap layers separating the common IMD layer and a top IMD layer;and forming a top via in the one or more top cap layers, the top viaconnected to the MTJ, such that, the MTJ substantially extends betweenthe one or more bottom cap layers and the one or more top cap layers.

Another exemplary embodiment is directed to a magnetoresistiverandom-access memory (MRAM) device comprising: a magnetic storage meansformed in a common insulating means with one or more means forperforming a logic function, wherein, the magnetic storage means isconnected to a bottom metallic means in a bottom insulating means and atop through interconnection means connected to a top insulating means,wherein the MTJ substantially extends between bottom means forseparating the common insulating means and the bottom insulating meansand one or more top means for separating the common insulating means andthe top insulating means.

Yet another exemplary embodiment is directed to a method of forming amagnetoresistive random-access memory (MRAM) device, the methodcomprising: patterning a bottom metal line in a bottom IMD layer;forming one or more bottom cap layers separating bottom IMD layer from acommon IMD layer; patterning a bottom electrode hole in the one or morebottom cap layers for forming a bottom electrode and filling the bottomelectrode hole with metal for the bottom electrode; depositing amagnetic tunnel junction (MTJ) on the bottom electrode; patterning theMTJ; depositing dielectric material to form the common IMD layer, andperforming planarization on top of the MTJ; patterning and depositinglogic elements in the common IMD layer; depositing a top cap layer forseparating the common IMD layer from a top IMD layer; and patterning atop via hole in the top cap layer and depositing a top via in the topvia hole to connect the MTJ to a top metal line in the top IMD layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are presented to aid in the description ofembodiments of the various embodiments and are provided solely forillustration of the embodiments and not limitation thereof.

FIG. 1 is an illustration of a conventional MRAM circuit with an MTJstorage element.

FIG. 2 is a cross-sectional view of a memory device comprising logicelements and MRAM cells according to co-pending application to Li.

FIG. 3 illustrates trends in device dimensions with advances in devicetechnologies.

FIGS. 4A-L illustrate variations of an exemplary memory device 400 forMRAM integration compatible with logic processes according to anexemplary embodiment.

FIG. 4M illustrates a top view of the layout of the MTJ side of memorydevice 400, which substantially corresponds to most of the variations ofmemory device 400 seen across FIGS. 4A-L.

FIG. 5 illustrates a flowchart detailing an exemplary process of formingmemory device 400 of FIGS. 4A-L

FIGS. 6A-H illustrate variations of an exemplary memory device 600 forMRAM integration compatible with logic processes according to anexemplary embodiment.

FIG. 6I illustrates a top view of the layout of the MTJ side of memorydevice 600, which substantially corresponds to most of the variations ofmemory device 600 seen across FIGS. 6A-H.

FIG. 7 illustrates a flowchart detailing an exemplary process of formingmemory device 600 of FIGS. 6A-H.

DETAILED DESCRIPTION

Aspects of the various embodiments are disclosed in the followingdescription and related drawings directed to specific embodiments.Alternate embodiments may be devised without departing from the scope ofthe invention. Additionally, well-known elements of the variousembodiments will not be described in detail or will be omitted so as notto obscure the relevant details of the various embodiments.

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration.” Any embodiment described herein as“exemplary” is not necessarily to be construed as preferred oradvantageous over other embodiments. Likewise, the term “embodiments”does not require that all embodiments include the discussed feature,advantage or mode of operation.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of embodiments. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”,“comprising,”, “includes” and/or “including”, when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Exemplary embodiments are directed to design and fabrication of MRAM,and in some aspects, more specifically to improved integration of MRAMor MTJ elements with logic elements as exemplarily applicable toadvanced device technologies. In other words, embodiments includedesigns and layouts of MTJ elements, which are compatible with futuredevice technologies with extremely small and ever shrinking dimensions(e.g., 20 nm, 16 nm, 10 nm, and so on . . . ). However, it will beunderstood that exemplary embodiments are not to be construed as limitedto any particular device technology, current, or future, but on theother hand, the embodiments represent efficient solutions for improvedutilization of space and area in integrated circuits or semiconductordevices comprising MRAM integration.

With reference to FIG. 3, a trend in device dimensions with advances indevice technologies is illustrated. Aspects of FIG. 3 can be explainedwith reference, again, to FIG. 2. Heights of various above-describedcomponents in MRAM integration are illustrated as a function of devicetechnology sizes. More specifically, logical elements are represented byvia and metal heights, for example, in a common layer x, as described inFIG. 2. Representatively, height of a common IMD layer (e.g., height ofIMDx and additionally, the thickness of bottom caps 1-2) for example isconsidered, to correspond to the height of layer x. From FIG. 3, it canbe gleaned that via and metal heights can scale rapidly. In currenttechnologies, such as 40/45 nm and 28 nm, the IMD height is around 2800nm and 1700 nm respectively, which allows sufficient room foraccommodating MRAM integration structures, such as, those illustrated inFIG. 2. However, as technology advances, the heights of vias and metallines dramatically reduce, and correspondingly, the height of IMD layersalso need to reduce. For example, for 20/16 nm technology, via heightsof 650 A, and for 10 nm technology, via heights of 400 A, are possible.Correspondingly, for 20/16 nm technology, the IMD height for IMDx (inaddition to thickness of bottom caps 1-2) of FIG. 2 would be limited toaround 1350 A, which leaves very little room for accommodating an MTJbit cell, along with its contacting metal line Mx, such as, forconfigurations of MTJ 202, as illustrated in FIG. 2. Further, cap layerthickness scales slower than logic in IMDx layer. These problemsassociated with scaling down of device sizes are seen to be very severein technologies such as, 10 nm, where the height of the IMDx layer wouldbe restricted to 800 A.

Accordingly, exemplary embodiments include improvements in design of theMTJ side elements to match the scaling in via and metal line heights inthe logic side. In some cases, parameters corresponding to number of topand bottom cap layers, positioning and thickness of cap layers,positioning and thickness of bottom electrodes BE, MTJ top electrode TEand/or hard mask (HM), etc., can be appropriately designed to suit thedemands of technological advances, as will be further described below.In some embodiments, one or more logic elements in the common IMD layerare formed such such that a combined height of a via and a metal lineformed in the common IMD layer matches a combined height of an exemplaryMTJ and the bottom electrode contact.

With reference now to FIGS. 4A-L, a first embodiment along withvariations thereof are depicted for exemplary integration of MRAM withlogic processes, robust for shrinking device sizes. More specifically,various aspects of memory device 400 are illustrated in these figures.For the sake of consistency and ease of explanation of distinguishingaspects of exemplary embodiments, FIGS. 4A-L adopt similar illustrativecharacteristics and nomenclature as those of aforementioned memorydevice 200 of FIG. 2 pertaining to an embodiment of Li. Morespecifically, like reference numerals are followed for like features,while distinguishing aspects are labeled differently.

With regard to commonalities between FIG. 2 and FIGS. 4A-L, in FIGS.4A-L, memory device 400 is illustrated with one set of components shownunder a “logic” side, and another set of components shown under a “MTJ”side to illustrate integration of MRAM elements, or magnetic storagemeans, or MTJ elements, compatible logic elements or logic processes. Aspreviously, three layers x−1, x, and x+1 are illustrated, withdielectrics or insulating means shown as IMD layers, IMDx−1, IMDx, andIMDx+1. In general, components belonging to these layers are labeledwith an appropriate suffix which identifies the layer in which thecomponent belongs. For example, on the logic side, are illustrated,through interconnection means or vias V′x+1 and V′x and metal lines M′xand M′x−1. The logic side can also include other semiconductor devices,but these are not illustrated, for the sake of clarity. Whereas, on theMTJ side, are illustrated vias Vx+1 and metal line Mx−1. Two means forseparating the IMDx−1 and IMDx layers are shown as bottom cap layers,“bottom-cap 1” and “bottom-cap 2” in FIGS. 4A-L, for separating IMDx−1and IMDx layers. The IMD layers are common to the logic side and the MTJside. In general, references to a “common IMD layer” are directed to theIMDx layer where the MTJ is formed.

In comparison to FIG. 2, only one means for separating the IMDx andIMDx+1 layers are shown as a top cap layer, “top-cap” which isillustrated as separating IMDx and IMDx+1 layers in FIGS. 4A-L, wherebyspace taken up by a second top cap layer can be avoided. Two bottom caplayers may still be employed in the embodiments depicted in FIGS. 4A-Lto provide stability to formation of MTJ elements which will be furtherdiscussed below. As previously noted, FIGS. 4A-L are applicable, forexample, to cases where the height of layer x with common IMDx layer, orthe separation between top-cap and bottom-caps 1-2 is reduced to keep upwith shrinking device sizes (e.g., 20 nm, 16 nm, 10 nm, technologies).Thus, in comparison to FIG. 2, it may be assumed, for the sake ofexplanation of exemplary aspects (but not as a limitation), that theheight of the x layer or separation between top and bottom cap layers issignificantly reduced (e.g., in proportion to the advanced devicetechnologies pertaining to shrinking device sizes, where exemplaryembodiments may be advantageously applied).

Coming now to some of the distinguishing characteristics, FIGS. 4A-Lillustrate variations of MTJ bit cell structures, where MTJ 402 alongwith TE 404 and BE 406 substantially extends between the bottom caplayers and the top cap layers. In other words, in contrast to memorydevice 200 of Li, memory device 400 sacrifices a metal line (e.g., Mx inFIG. 2) connected to MTJ 402. Instead, TE 404 is directly connected tovia Vx+1 to form connections in layer x+1, thus creating more room forformation of MTJ 402 in the reduced height available in common IMDxlayer.

Additionally, in contrast to memory device 200 of Li, memory device 400of FIGS. 4A-L, may also reduce a horizontal or surface area of BE 406and TE 404 by aligning them with the body of MTJ 402. This alignment canbe understood by referring to FIG. 4M which illustrates a top view ofthe layout of the MTJ side of memory device 400, which substantiallycorresponds to most of the variations of memory device 400 seen acrossFIGS. 4A-L. The MTJ stack of MTJ 402 (which may have a circularhorizontal surface area) is aligned or centered with TE 404 whichcouples to via Vx+1. On the other side, MTJ 402 is coupled to BE 406,which is coupled to Mx−1 through a BE contact (not shown in this view).The horizontal surface area of BE 406, as seen from the top view of FIG.4M, can vary across FIGS. 4A-L, as will be further explained below.

With a further detailed reference to the figures, FIG. 4A provides basicstructural details, variations of which are seen across the remainingfigures of FIGS. 4B-L. FIG. 4A illustrates, for example, MTJ 402comprising an MTJ stack, which includes free layer 402 f, barrier layer402 b, and pinned layer 402 c, where the MTJ stack is centered with TE404 and BE 406. A bottom contact to metal Mx−1 in the IMDx−1 layer canbe formed through a BE contact 412 as shown (alternatively, BE contact412 may be formed by a via). Although BE contact 412 can be of smallerhorizontal surface area than BE 406 (as depicted), thus saving on theamount of metal to be deposited for formation of BE contact 412, this isnot a requirement, and BE contact 412 may be formed of any appropriatesize. The body of MTJ 402 may be covered by a protective covering, sidecap 408. Further, a hard mask HM 410 (e.g., made of conductive material,to protect the MTJ stack and electrically couple MTJ 402 to TE 404) mayalso be present. FIGS. 4B and 4C represent alternatives of FIG. 4A,which include, in some aspects, intermediate structures which may beinvolved in arriving at the structure of FIG. 4A described above. Inmore detail, in FIG. 4B, protective side cap 414Ab can be formed whichprotects and forms a sidewall that surrounds the entire MTJ structure,including TE 404, BE 406, as well as, an extended pinned layer 402 pAb.In FIG. 4C, protective side cap 414Ac additionally covers extendedbarrier layer 402 bAc formed over extended pinned layer 402 pAc.Protective side caps 414Ab and 414Ac can protect the variations of MTJ402 illustrated in FIGS. 4A-C during a two step patterning process,discussed further with reference to FIG. 5 below. In this manner, theelements in the MTJ side can be designed such that they can beaccommodated within the reduced height of common IMDx layer, and remaincompatible with the integration of the logic side.

With reference now to FIGS. 4D-F, variations of memory device 400 ofFIG. 4A will now be discussed. In FIG. 4D, the horizontal surface areaof BE 406B may be reduced, and side cap 408B may be appropriatelytailored. In FIG. 4E, the pinned layer of MTJ 402 may be widened, andside cap 408C can be contoured to cover the wider pinned layer; thehorizontal surface area of BE 406C can also be appropriately increasedor widened. Horizontal segments of side cap 408C are removed in side cap408D of FIG. 4F.

Coming now to FIGS. 4G-L, bottom metal lines M′x−1 and Mx−1 are formedto protrude through bottom-cap 1. In this manner, on the MTJ side, thewidth of BE contact 412E can be shrunk, and metal line Mx−1 in the lowerlayer x−1 can be brought closer to MTJ 402. Once again, like FIG. 4A,FIG. 4G represents a basic structure, while FIGS. 4H and 4I representalternatives of FIG. 4G, which include, in some aspects, intermediatestructures which may be involved in arriving at the structure of FIG.4G. More specifically in FIG. 4G, BE 406E is connected to metal lineMx−1 through BE contact 412E, where BE contact 412E acts as a viathrough bottom-cap 2. Since this arrangement can clear up some room inthe x layer or create additional separation between bottom and top caplayers, HM 410E may be elongated or formed of additional height tocouple MTJ 402 to TE 404. Correspondingly, side cap 408E can be enlargedto protect MTJ 402 along with the additional height of HM 410E. Withreference to FIG. 4H, protective side cap 414Eb can be formed whichprotects and forms a sidewall over the entire MTJ structure of FIG. 4G,including TE 404, BE 406E, as well as, an extended pinned layer 402 pEb.In FIG. 4I, protective side cap 414Ec additionally covers extendedbarrier layer 402 bEc formed over extended pinned layer 402 pEc.Protective side caps 414Eb and 414Ec can protect the variations of MTJ402 illustrated in FIGS. 4G-I during a two step patterning process,discussed further with reference to FIG. 5 below.

In FIG. 4J, the horizontal surface area of BE 406F is reduced and sidecap 408F is correspondingly modified to remove its horizontal segmentsthat were formed on BE 406E in FIG. 4G. In FIG. 4K, the pinned layer ofMTJ 402 is widened, the horizontal surface area of BE 406G is increased,and side cap 408G is appropriately contoured. Compared to FIG. 4K, thehorizontal surface area of BE 406H is reduced and side cap 408H iscorrespondingly tailored in FIG. 4L.

With reference again to FIG. 4M, as previously mentioned, a top view ofthe layout of the MTJ side of memory device 400, which substantiallycorresponds to most of the variations of memory device 400 seen acrossFIGS. 4A-L is illustrated. In more detail, as depicted, metal Mx−1 inthe IMDx−1 layer is shown to be of a large rectangular area, which is tobe treated as the bottom most layer in this top view. On top of thismetal Mx−1 layer, is formed, BE 406, of rectangular dimensions in thetop view. The MTJ stack, depicted as MTJ 402 is shown in a conventionalcylindrical or circular/elliptical shape in the top view, formed on topof BE 406. TE 404 is formed on top of MTJ 402, and via Vx+1 is connectedto TE 404 in order to connect MTJ 402 to the top IMDx+1 layer, which maycomprise a metal line such as Mx+1 (not shown). It will be understoodthat the relative dimensions of the elements shown in FIG. 4M are merelyfor illustrative purposes of an exemplary embodiment, and these relativedimensions and shapes are not to be construed as a limitation.

With reference now to FIG. 5, a flowchart detailing an exemplary processof forming memory device 400 is illustrated. The flowchart includes thefollowing process: metal line Mx−1 (as well as, metal line M′x−1 for thelogic side) in IMDx−1 in layer x−1 is patterned—Block 502; insulatingbottom cap layers bottom-caps 1 and 2 in layer x can be depositednext—Block 504; the bottom cap layers are patterned to make room for aBE contact (e.g., BE contact 412E), metal is deposited to form the BEcontact, and chemical mechanical polishing (CMP) is performed prior todepositing MTJ layers—Block 506; in some aspects, a thin BE layer (notexplicitly shown) is then deposited and a short CMP is performed,following which a BE (e.g., BE 404) and MTJ layers or MTJ stack (e.g.,MTJ 402, comprising, for example, a pinned layer, barrier layer, freelayer, and HM 410) are deposited on the thin BE layer—Block 508; the MTJlayers (or in some aspects, the free layer, such as, 402 f, of MTJ 402)are patterned and a side cap layer (e.g., side cap 408) are deposited,following which, the pinned layer (e.g., pinned layer 402 p) and BE arepatterned, using either a mask or a spacer, or by a TE mask—Block 510;common IMDx is deposited in the regions between the MTJ side and thelogic side in layer x, and planarization is performed on top of theMTJ—Block 512; a TE (e.g., TE 404) is deposited on the MTJ stack and theTE is patterned, where, optionally the MTJ stack or the pinned layer BElayer are patterned according to a two-step MTJ etch which involves aprotective side cap (e.g., according to FIGS. 4A-C; 4G-I)—Block 514;dielectric IMDx is deposited again, in order to fill open regions oflayer x, following which IMD CMP process can be used for theplanarization of IMDx layer—Block 516; bottom-caps 1 and 2 are patternedand via V′x for the logic side is created through bottom-caps land 2,and metal line M′x/via V′x for the logic side in layer x can bedeposited, while taking care not to pattern on the MTJ side—Block 518;top-cap 1 can be deposited over the TE on the MTJ side, and the metalline M′x on the logic side—Block 520; and top-cap is patterned to formvias, Vx+1 on the MTJ side to connect to the TE and V′x+1 to connect tometal line M′x on the logic side—Block 522.

In the above-described process of FIG. 5, three masks may be needed inthe case of memory device fabricated according to FIGS. 4A-L, where afirst mask is for the BE contact formation discussed in Blocks 506-508,a second mask for formation of the MTJ stack as discussed in Blocks508-510, and a third mask for formation of the TE connection with thetop of the MTJ as discussed in Block 514. It is seen that memory device400 is fully compatible with the logic processes (e.g., Blocks 502-504and 518-522).

With reference now to FIGS. 6A-H, a second embodiment along withvariations thereof are depicted for exemplary integration of MRAM withlogic processes, robust for shrinking device sizes. More specifically,various aspects of memory device 600 are illustrated in these figures.For the sake of consistency and ease of explanation of distinguishingaspects of exemplary embodiments, FIGS. 6A-L adopt similar illustrativecharacteristics and nomenclature as those of aforementioned memorydevice 200 of FIG. 2 and device 400 of FIGS. 4A-L. More specifically,like reference numerals are followed for like features, whiledistinguishing aspects are labeled differently. A detailed explanationof common aspects will not be repeated herein, for the sake of brevity.

Briefly, as in FIG. 2 and FIGS. 4A-L, in FIGS. 6A-H, memory device 600is illustrated with one set of components shown under a “logic” side,and another set of components shown under a “MTJ” side to illustrateintegration of MRAM or MTJ elements with a logic process. As previously,three layers x−1, x, and x+1 are illustrated, with common IMD layers,IMDx−1, IMDx, and IMDx+1 and components belonging to these layers arelabeled with an appropriate suffix which identifies the layer in whichthe component belongs. For example, on the logic side, are illustrated,vias V′x+1 and V′x and metal lines M′x and M′x−1. Whereas, on the MTJside, are illustrated vias Vx+1 and metal line Mx−1. Two bottom caplayers, bottom-caps 1 and 2 are illustrated for separating IMDx−1 andIMDx layers and one top cap layer, top-cap is illustrated as separatingIMDx and IMDx+1 layers. As in the case of FIGS. 4A-L, FIGS. 6A-H alsodepict aspects where the height of layer x with common IMDx layer, orthe separation between top-cap and bottom-caps 1-2 is reduced to keep upwith shrinking device sizes (e.g., 20 nm, 16 nm, 10 nm, technologies),for example, in comparison to FIG. 2.

On the other hand, with regard to differences of memory devices 600 and400, FIGS. 6A-H generally pertain to embodiments which sacrifice a topelectrode (TE) formation over MTJ bit cell structures, thus creatingmore room for integration of the MTJ side elements. Instead of forming aseparate TE, memory device 600 utilizes the conductive hard mask (HM)which is already present in an exemplary MTJ stack to connect to the viaVx+1 which connects to IMDx+1 layer in layer x+1. Thus, in somenon-restrictive aspects, memory device 600 may be considered to beapplicable to device technologies which are further advanced (i.e.,offer even less height for MTJ side integration) than memory device 400;although this is not necessary, and memory device 600 may be chosen as amatter of design choice even if memory device 400 may also be applicableto a particular MRAM integration effort.

More specifically, FIGS. 6A-H illustrate variations of memory device 600where MTJ 602 includes HM 610, which is directly coupled to via Vx+1 onthe MTJ side, in layer x, without an intermediate TE. Remaining aspectsof FIGS. 6A-H are substantially to FIGS. 4A-L, and will be discussed inadditional detail in the following sections. Similar to memory device400 of FIGS. 4A-L, memory device 600 of FIGS. 6A-H may also reduce ahorizontal or surface area of BE 606 by aligning BE 606 with the body ofMTJ 602. This alignment can be understood by referring to FIG. 6I whichillustrates a top view of the layout of the MTJ side of memory device600, which substantially corresponds to most of the variations of memorydevice 600 seen across FIGS. 6A-H. The MTJ stack of MTJ 602 (which mayhave a circular horizontal surface area) is aligned or centered with viaVx+1, and coupled to via Vx+1 through HM 610 (not shown in this view).On the other side, MTJ 602 is coupled to BE 606 as before, which iscoupled to Mx−1 through a BE contact (also not shown in this view). Thehorizontal surface area of BE 606, as seen from the top view of FIG. 6I,can vary across FIGS. 6A-H, as will be further explained below.

With a further detailed reference to FIG. 6A, for example, MTJ 602comprises a free layer, a barrier layer, and a pinned layer which formthe MTJ stack, and are centered or aligned with BE 606. A bottom contactto metal Mx−1 in the IMDx−1 layer can be formed through a BE contact 612as shown (alternatively, BE contact 612 may be formed by a via).Although BE contact 612 can be of smaller horizontal surface area thanBE 606 (as depicted), thus saving on the amount of metal to be depositedfor formation of BE contact 612, this is not a requirement, and BEcontact 612 may be formed of any appropriate size. The body of MTJ 602may be covered by a protective covering such as, side cap 408. Asalready mentioned, HM 610 (e.g., made of conductive material, to protectthe MTJ stack) is electrically coupled to via Vx+1 for connecting MTJ602 in layer x to elements such as, a metal line Mx+1 (not shown) inlayer x+1. As seen, memory device 600 also satisfies requirements ofcompatible MRAM integration with logic processes, where the MTJ sideelements are designed such that they can be accommodated within thereduced height of common IMDx layer.

With reference now to FIGS. 6B-D, variations of memory device 600 ofFIG. 6A will now be discussed. In FIG. 6B, the horizontal surface areaof BE 606B may be reduced, and side cap 608B may be appropriatelytailored. In FIG. 6C, the pinned layer of MTJ 602 may be widened, andside cap 608C can be contoured to cover the wider pinned layer; thehorizontal surface area of BE 606C can also be appropriately increasedor widened. Horizontal segments of side cap 608C are removed in side cap608D of FIG. 6D.

Coming now to FIGS. 6E-H, bottom metal lines M′x−1 and Mx−1 are formedto protrude through bottom-cap 1, similar to the embodiments depicted inFIGS. 4G-L. In this manner, on the MTJ side, the width of BE contact612E can be shrunk, and metal line Mx−1 in the lower layer x−1 can bebrought closer to MTJ 602. More specifically in FIG. 6E, BE 606E isconnected to metal line Mx−1 through BE contact 612E, where BE contact612E acts as a via through bottom-cap 2. Since this arrangement canclear up some room in the x layer or create additional separationbetween bottom and top cap layers, HM 610E may be elongated or formed ofadditional height to couple MTJ 602 to via Vx+1. Correspondingly, sidecap 608E can be enlarged to protect MTJ 602 along with the additionalheight of HM 610E. In FIG. 6F, the horizontal surface area of BE 606F isreduced and side cap 608F is correspondingly modified to remove itshorizontal segments that were formed on BE 606E in FIG. 6E. In FIG. 6G,the pinned layer of MTJ 602 is widened, the horizontal surface area ofBE 606G is increased, and side cap 608G is appropriately contoured.Compared to FIG. 6G, the horizontal surface area of BE 606H is reducedand side cap 608H is correspondingly tailored.

With reference now to FIG. 7, a flowchart detailing an exemplary processof forming memory device 600 is illustrated. The flowchart includes thefollowing process: metal line Mx−1 (as well as, metal line M′x−1 for thelogic side) in IMDx−1 in layer x−1 is patterned—Block 702; insulatingbottom cap layers bottom-caps 1 and 2 in layer x can be depositednext—Block 704; the bottom cap layers are patterned to make room for aBE contact (e.g., BE contact 612), metal for the BE contact is thenfilled and chemical mechanical polishing (CMP) is performed—Block 706; athin BE layer or film is then deposited and a short CMP is performed,following which, a BE (e.g., BE 604) and MTJ layers or MTJ stack (e.g.,MTJ 602, comprising, for example, a pinned layer, barrier layer, freelayer, and HM 610) are deposited on the thin BE layer—Block 708; the MTJlayers are patterned and a side cap layer (e.g., side cap 608) aredeposited, and the BE is patterned, using either a mask or aspacer—Block 710; common IMDx is deposited in the regions between theMTJ side and the logic side in layer x, and planarization is performedon top of the MTJ—Block 712; bottom-caps 1 and 2 are patterned and viaV′x for the logic side is created through bottom-caps land 2, and metalline M′x for the logic side in layer x can be deposited, while takingcare not to pattern on the MTJ side—Block 714; top-cap 1 can bedeposited over the hard mask (e.g., HM 610) on the MTJ side, and themetal line M′x on the logic side—Block 716; and top-cap 1 is patternedto form vias, Vx+1 on the MTJ side to connect to the HM and V′x+1 toconnect to metal line M′x on the logic side—Block 718.

In contrast to the process described in FIG. 5 for formation of memorydevice 400 according to FIGS. 4A-L, it is seen that fewer steps areinvolved in the above-described process of FIG. 7 for formation ofmemory device 600 according to FIGS. 6A-H. This is because steps relatedto formation of a TE are not required in the process of FIG. 7.Correspondingly, the number of masks used in the process of FIG. 7 isalso lower than those discussed with regard to FIG. 5.

In more detail, for the process of FIG. 7, only two masks may be neededin the case of memory device 600 fabricated according to FIGS. 6A-H,where a first mask is for the BE contact formation discussed in Blocks706-708 and a second mask for formation of the MTJ stack discussed inBlocks 708-710. It is seen that memory device 600 is also fullycompatible with the logic processes (e.g., Blocks 702-704 and 714-718).

Those of skill in the art will appreciate that information and signalsmay be represented using any of a variety of different technologies andtechniques. For example, data, instructions, commands, information,signals, bits, symbols, and chips that may be referenced throughout theabove description may be represented by voltages, currents,electromagnetic waves, magnetic fields or particles, optical fields orparticles, or any combination thereof.

Further, those of skill in the art will appreciate that the variousillustrative logical blocks, modules, circuits, and algorithm stepsdescribed in connection with the embodiments disclosed herein may beimplemented as electronic hardware, computer software, or combinationsof both. To clearly illustrate this interchangeability of hardware andsoftware, various illustrative components, blocks, modules, circuits,and steps have been described above generally in terms of theirfunctionality. Whether such functionality is implemented as hardware orsoftware depends upon the particular application and design constraintsimposed on the overall system. Skilled artisans may implement thedescribed functionality in varying ways for each particular application,but such implementation decisions should not be interpreted as causing adeparture from the scope of the present invention.

The methods, sequences and/or algorithms described in connection withthe embodiments disclosed herein may be embodied directly in hardware,in a software module executed by a processor, or in a combination of thetwo. A software module may reside in RAM memory, flash memory, ROMmemory, EPROM memory, EEPROM memory, registers, hard disk, a removabledisk, a CD-ROM, or any other form of storage medium known in the art. Anexemplary storage medium is coupled to the processor such that theprocessor can read information from, and write information to, thestorage medium. In the alternative, the storage medium may be integralto the processor.

Accordingly, an embodiment of the invention can include a computerreadable media embodying a method for MRAM integration with logicprocesses, compatible and robust for future device technologies withshrinking device sizes. Accordingly, the invention is not limited toillustrated examples and any means for performing the functionalitydescribed herein are included in embodiments of the invention.

While the foregoing disclosure shows illustrative embodiments of theinvention, it should be noted that various changes and modificationscould be made herein without departing from the scope of the inventionas defined by the appended claims. The functions, steps and/or actionsof the method claims in accordance with the embodiments of the inventiondescribed herein need not be performed in any particular order.Furthermore, although elements of the invention may be described orclaimed in the singular, the plural is contemplated unless limitation tothe singular is explicitly stated.

What is claimed is:
 1. A magnetoresistive random-access memory (MRAM)comprising: a magnetic tunnel junction (MTJ) formed in a commoninterlayer metal dielectric (IMD) layer with one or more logic elements,wherein, the MTJ is connected to a bottom metal line in a bottom IMDlayer and a top via connected to a top IMD layer, wherein the MTJ is indirect physical contact with the top via, wherein the MTJ extendsbetween one or more bottom cap layers configured to separate the commonIMD layer and the bottom IMD layer, and one or more top cap layersconfigured to separate the common IMD layer and the top IMD layer. 2.The MRAM of claim 1, wherein the MTJ comprises a free layer, a barrierlayer, and a pinned layer.
 3. The MRAM of claim 1, wherein the MTJcomprises a hard mask connected to a top electrode, such that the MTJ isconnected to the top via through the top electrode.
 4. The MRAM of claim3 comprising two bottom cap layers configured to separate the common IMDlayer and the bottom IMD layer, and wherein a bottom electrode of theMTJ is connected to the bottom metal line through a bottom electrodecontact, wherein the bottom electrode contact extends through both ofthe two bottom cap layers.
 5. The MRAM of claim 4, fabricated with threemasks, wherein a first mask is used for formation of the bottomelectrode contact, a second mask is used for formation the MTJ, and athird mask is used for formation the top electrode.
 6. The MRAM of claim3 comprising two bottom cap layers configured to separate the common IMDlayer and the bottom IMD layer, and wherein a bottom electrode of theMTJ is connected to the bottom metal line through a bottom electrodecontact, wherein the bottom electrode contact extends through only oneof the two bottom cap layers.
 7. The MRAM of claim 1, wherein the MTJcomprises a hard mask such that the MTJ is connected to the top viadirectly through the hard mask.
 8. The MRAM of claim 7, comprising twobottom cap layers configured to separate the common IMD layer and thebottom IMD layer, and wherein a bottom electrode of the MTJ is connectedto the bottom metal line through a bottom electrode contact, wherein thebottom electrode contact extends through both of the two bottom caplayers.
 9. The MRAM of claim 8, fabricated with two masks, wherein afirst mask is used for formation of the bottom electrode contact, and asecond mask is used for formation of the MTJ.
 10. The MRAM of claim 7,comprising two bottom cap layers configured to separate the common IMDlayer and the bottom IMD layer, and wherein a bottom electrode of theMTJ is connected to the bottom metal line through a bottom electrodecontact, wherein the bottom electrode contact extends through only oneof the two bottom cap layers.
 11. The MRAM of claim 1, wherein the oneor more logic elements comprise one or more of a via and a metal lineformed in the common IMD layer.
 12. The MRAM of claim 1, furthercomprising a protective side cap configured to surround the MTJ.
 13. Amagnetoresistive random-access memory (MRAM) device comprising: amagnetic storage means formed in a common insulating means with one ormore means for performing a logic function, wherein, the magneticstorage means is connected to a bottom metallic means in a bottominsulating means and a top through interconnection means connected to atop insulating means, wherein the magnetic storage means is in directphysical contact with the top through interconnection means, and whereina magnetic tunnel junction (MTJ) extends between bottom means forseparating the common insulating means and the bottom insulating meansand one or more top means for separating the common insulating means andthe top insulating means.